Single quantum dot nanowire photodetectors

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Date: 
2010-09-16
Author(s): 

M. P. van Kouwen, M. H. M. van Weert, M. E. Reimer, N. Akopian, U. Perinetti, R. E. Algra, E. P. A. M. Bakkers, L. P. Kouwenhoven, and V. Zwiller

Reference: 

Appl. Phys. Lett. 97, 113108 (2010)

We report InP nanowire photodetectors with a single InAsP quantum dot as light absorbing element. With excitation above the InP band gap, the nanowire photodetectors are efficient (quantum efficiency of 4%). Under resonant excitation of the quantum dot, the photocurrent amplitude depends on the linear polarization direction of the incident light. The photocurrent is enhanced (suppressed) for a polarization parallel (perpendicular) to the axis of the nanowire (contrast 0.83). The active detection volume under resonant excitation is 7×103 nm3. These results show the promising features of quantum dots embedded in nanowire devices for electrical light detection at high spatial resolution.