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Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress

Mon, 2011-02-14 18:39 - Daniel Rudolph
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Date: 
2010-02-12
Author(s): 

F. Ding, R. Singh, J. D. Plumhof, T. Zander, V. Křápek1, Y. H. Chen2, M. Benyoucef1, V. Zwiller, K. Dörr, G. Bester, A. Rastelli, and O. G. Schmidt

Reference: 

Phys. Rev. Lett. 104, 067405 (2010)

URL: 

http://link.aps.org/doi/10.1103/PhysRevLett.104.067405

We study the effect of an external biaxial stress on the light emission of single InGaAs/GaAs(001) quantum dots placed onto piezoelectric actuators. With increasing compression, the emission blueshifts and the binding energies of the positive trion (X+) and biexciton (XX) relative to the neutral exciton (X) show a monotonic increase. This phenomenon is mainly ascribed to changes in electron and hole localization and it provides a robust method to achieve color coincidence in the emission of X and XX, which is a prerequisite for the possible generation of entangled photon pairs via the recently proposed “time reordering” scheme.