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Surround-gated vertical nanowire quantum dots

Mon, 2011-02-14 17:25 - Daniel Rudolph
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Date: 
2010-06-11
Author(s): 

M. H. M. van Weert, M. den Heijer, M. P. van Kouwen, R. E. Algra, E. P. A. M. Bakkers, L. P. Kouwenhoven1, and V. Zwiller

Reference: 

Appl. Phys. Lett. 96, 233112 (2010)

URL: 

http://link.aip.org/link/doi/10.1063/1.3452346

We report voltage dependent photoluminescence experiments on single indium arsenide phosphide (InAsP) quantum dots embedded in vertical surround-gated indium phosphide (InP) nanowires. We show that by tuning the gate voltage, we can access different quantum dot charge states. We study the anisotropic exchange splitting by polarization analysis, and identify the neutral and singly charged exciton. These results are important for spin addressability in a charge tunable nanowire quantum dot.