Novel E-beam lithography technique for in-situ junction fabrication: the controlled undercut

Printer-friendly versionSend by emailPDF version

Florent Lecocq, Cécile Naud, Ioan M. Pop, Zhi-Hui Peng, Iulian Matei, Thierry Crozes, Thierry Fournier, Wiebke Guichard, Olivier Buisson


arXiv:1101.4576v2 [cond-mat.mes-hall]

We present a novel shadow evaporation technique for the realization of junctions and capacitors. The design by E-beam lithography of strongly asymmetric undercuts on a bilayer resist enables in-situ fabrication of junctions and capacitors without the use of the well-known suspended bridge[1]. The absence of bridges increases the mechanical robustness of the resist mask as well as the accessible range of the junction size, from 0.01 to more than 10000 micron square. We have fabricated Al/AlOx/Al Josephson junctions, phase qubit and capacitors using a 100kV E- beam writer. Although this high voltage enables a precise control of the undercut, implementation using a conventional 20kV E-beam is also discussed. The phase qubit coherence times, extracted from spectroscopy resonance width, Rabi and Ramsey oscillations decay and energy relaxation measurements, are longer than the ones obtained in our previous samples realized by standard techniques. These results demonstrate the high quality of the junction obtained by this controlled undercut technique.