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Nickel related optical centres in diamond created by ion implantation

Thu, 2011-02-17 16:37 - Daniel Rudolph
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Date: 
2010-05-04
Author(s): 

J. O. Orwa, I. Aharonovich, F. Jelezko, G. Balasubramanian, P. Balog, M. Markham, D. J. Twitchen, A. D. Greentree, and S. Prawer

Reference: 

J. Appl. Phys. 107, 093512 (2010)

URL: 

http://jap.aip.org/japiau/v107/i9/p093512_s1

Ni-related optical centres in diamond are promising as alternatives to the nitrogen vacancy (NV) centre for quantum applications and biomarking. In order to achieve the reliability and reproducibility required, a method for producing the Ni-related centres in a controllable manner needs to be established. In this study, we have attempted this control by implanting high purity CVD diamond samples with Ni and N followed by thermal annealing. Samples implanted with Ni show a new Ni-related PL peak centered at 711 nm and a well known doublet at 883/885 nm along with weak NV luminescence. The optical properties of the two Ni-related defects are investigated. In particular, an excited state lifetime of the 883/885 nm peak is measured to be 11.6 ns.