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Giant Stark effect in the emission of single semiconductor quantum dots

Mon, 2011-02-14 16:49 - Q-Essence Coordinator
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Date: 
2010-07-19
Author(s): 

Anthony J. Bennett, Raj B. Patel, Joanna Skiba-Szymanska, Christine A. Nicoll, Ian Farrer, David A. Ritchie, and Andrew J. Shields

Reference: 

Appl. Phys. Lett. 97, 031104 (2010)

URL: 

http://link.aip.org/link/doi/10.1063/1.3460912

We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission from a dot at electric fields of 500 kV cm−1, leading to Stark shifts of up to 25 meV. Our results suggest this technique may enable future applications that require self-assembled dots with transitions at the same energy.