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Diameter dependent optical emission properties of InAs nanowires grown on Si

Tue, 2013-11-19 00:47 - Lukas Hanschke
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Date: 
2012-07-30
Author(s): 

G. Koblmüller, K. Vizbaras, S. Hertenberger, S. Morkötter, D. Rudolph, J. Becker, M. Doeblinger, M. C. Amann, J. J. Finley, and G. Abstreiter

Reference: 

Appl. Phys. Lett. 101, 053103 (2012)

URL: 

http://dx.doi.org/10.1063/1.4739001

We report on the optical emission properties of catalyst-free, molecular beam epitaxy grownInAs nanowires (NW) on Si (111) using photoluminescence spectroscopy. InAs NW ensembles with similar density, length, and crystal structure (wurtzite-phase with stacking faults) but substantially different NW diameter (40–135 nm) are investigated, and the role of diameter on band-edge emission elucidated. Thick (>100 nm) as-grown NWs show relatively strong emission efficiency with emission up to >130 K, red-shift with temperature (T) and low-T band‐edge energy of ∼0.41 eV similar to bulk zincblende InAs. Reduction in NW diameter yields a characteristic blue‐shift (∼0.435 eV for 40-nm thin NWs), which is related to quantum confinement effects and confirmed by simulations.