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Activation mechanisms for charge noise

Wed, 2012-03-21 06:46 - Lukas Hanschke
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Date: 
2011-02-24 - 2012-03-21
Author(s): 

Martin V Gustafsson, Arsalan Pourkabirian, John Clarke, and Per Delsing

Reference: 

arXiv 1202.5350

URL: 

http://arxiv.org/abs/1202.5350

Measurements of the temperature and bias dependence of Single Electron Transistors (SETs) show that charge noise increases linearly with temperature above a voltage-dependent threshold temperature, and that its low temperature saturation is due to self-heating. We show further that the two-level fluctuators responsible for charge noise are in strong thermal contact with hot electrons on the SET island, and at a temperature significantly higher than that of the substrate. We suggest that the noise is caused by electrons tunneling between the island and nearby potential wells.