Activation mechanisms for charge noise

Printer-friendly versionSend by emailPDF version
2011-02-24 - 2012-03-21

Martin V Gustafsson, Arsalan Pourkabirian, John Clarke, and Per Delsing


arXiv 1202.5350

Measurements of the temperature and bias dependence of Single Electron Transistors (SETs) show that charge noise increases linearly with temperature above a voltage-dependent threshold temperature, and that its low temperature saturation is due to self-heating. We show further that the two-level fluctuators responsible for charge noise are in strong thermal contact with hot electrons on the SET island, and at a temperature significantly higher than that of the substrate. We suggest that the noise is caused by electrons tunneling between the island and nearby potential wells.