Spectroscopic investigations of QIPC components at optical and terahertz frequencies

A. Exciton dynamics in single quantum dots

• Time-resolved photoluminescence

• Excitation of bright and dark excitons using pulsed terahertz fields

Publications

1. D. Stephan, J. Bhattacharyya, Y.H. Huo, O.G. Schmidt, A. Rastelli, M. Helm, and H. Schneider, Inter-sublevel dynamics in single InAs/GaAs quantum dots induced by strong terahertz excitation, Appl. Phys. Lett. 108, 082107 (2016)
2. M. Teich, S. Winnerl, D.R. Stephan, H. Schneider, M. Helm, and L.R. Wilson, Intersublevel dephasing in InAs/GaAs quantum dots below the Reststrahlen band, Appl. Phys. Lett. 103, 252110 (2013)
3. J. Bhattacharyya, S. Zybell, S. Winnerl, M. Helm, M. Hopkinson, L. R. Wilson, and H. Schneider, In-plane interdot carrier transfer in InAs/GaAs quantum dots, Appl. Phys. Lett. 100, 051109 (2012)
4. J. Bhattacharyya, M. Wagner, M. Helm, M. Hopkinson, L. R. Wilson, and H. Schneider, Terahertz activated luminescence of trapped carriers in InGaAs/GaAs quantum dots, Appl. Phys. Lett. 97, 031101 (2010).

B. Scattering near-field optical microscopy (s-SNOM) in the mid-infrared and terahertz regimes

• Impurities in Si and GaAs

• Electrons in InAs quantum dots

Publications

1. M. Fehrenbacher, S. Winnerl, H. Schneider, J. Döring, S. C. Kehr, L. M. Eng, Y. Huo, O. G. Schmidt, K. Yao, Y. Liu, and M. Helm, Plasmonic Superlensing in Doped GaAs, Nano Lett. 15, 1057 (2015)
2. R. Jacob, S. Winnerl, M. Fehrenbacher, J. Bhattacharyya, H. Schneider, M. T. Wenzel, H.-G. von Ribbeck, L. M. Eng, P. Atkinson, A. Rastelli, O. G. Schmidt, and M. Helm, Intersublevel spectroscopy on single InAs-quantum dots by terahertz near-field microscopy, Nano Lett. 12, 4336-4340 (2012).
3. R. Jacob, S. Winnerl, H. Schneider, M. Helm, M. T. Wenzel, H.-G. v. Ribbeck, L. M. Eng, and S. Kehr, Quantitative determination of the charge carrier concentration of sub-surface implanted silicon by IR-near-field spectroscopy, Opt. Express 18, 26206-26213 (2010).

Location