Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications

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Date: 
2010-10-12
Reference: 

A. Gaggero, S. Jahanmiri Nejad, F. Marsili, F. Mattioli, R. Leoni, D. Bitauld, D. Sahin, G. J. Hamhuis, R. Nötzel, R. Sanjines, and A. Fiore
Appl. Phys. Lett. 97, 151108 (2010)
http://apl.aip.org/resource/1/applab/v97/i15/p151108_s1

We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.