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Research Type: 

The MBE group is active in the field of design, growth and characterization of low-dimensional epitaxial nanostructures based on III-V semiconductors, for applications in the following technological fields:

Photonics: single photon sources, lasers, broadband light sources, 2D and 3D photonic crystals

Plasmonics: coupling of metallic nanostructures with semiconductor QDs

Energy efficiency: Low- dimensional structures for thermoelectric applications

Sensing: Surface QDs, rolled-up nanotubes




Facilities include:

- Molecular Beam Epitaxy (MBE) Varian GEN2 double growth chamber system installed in a clean room.

- a class 100 clean room with a module for chemical treatment of semiconductors.

- a Fourier Transform Photoluminescence (PL) setup with cooled Ge detector for measurements in the 700 – 1500 nm window and in 10-300 K range.

The group has also access to a installed Field Emission Scanning Electron Microscopy with Focused Ion Beam (FESEM-FIB) for SEM characterization, FIB nanofabrication and Electron Beam Litography (EBL). The group activities are well supported by the presence of advanced characterization tools within the IMEM institute (structural, electrical and optical)

Paola Frigeri


IMEM-CNR Research Institute
Parco Area delle Scienze, 37/A
44° 45' 45.828" N, 10° 18' 51.4836" E
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