15.20.Pt Penning traps (planar and circular)

Electric field compensation and sensing with a single ion in a planar trap

Date: 
2011-12-12
Author(s): 

S. Narayanan, N. Daniilidis, S. Möller, R. Clark, F. Ziesel, K. Singer, F. Schmidt-Kaler, H. Häffner

Reference: 

J. Appl. Phys. 110, 114909 (2011);

http://dx.doi.org/10.1063/1.3665647

We use a single ion as a movable electric field sensor with accuracies on the order of a few V/m. For this, we compensate undesired static electric fields in a planar radio frequency trap and characterize the static field and its curvature over an extended region along the trap axis. We observe a strong buildup of stray charges around the loading region on the trap resulting in an electric field of up to 1.3 kV/m at the ion position.

Trapped electron coupled to superconducting devices

Date: 
2011-04-27
Author(s): 

P. Bushev, D. Bothner, J. Nagel, M. Kemmler, K. B. Konovalenko, A. Loerincz, K. Ilin, M. Siegel, D. Koelle, R. Kleiner, F. Schmidt-Kaler

Reference: 

The European Physical Journal D 63, 9 (2011)
doi: 10.1140/epjd/e2011-10517-6

We propose to couple a trapped single electron to superconducting structures located at a variable distance from the electron. The electron is captured in a cryogenic Penning trap using electric fields and a static magnetic field in the tesla range. Measurements on the electron will allow investigating the properties of the superconductor such as vortex structure, damping and decoherence.

Electric field compensation and sensing with a single ion in a planar trap

Date: 
2011-06-10
Author(s): 

S. Narayanan, N. Daniilidis, S. Möller, R. Clark, F. Ziesel, K. Singer, F. Schmidt-Kaler, H. Häffner

Reference: 

arXiv:1106.2730 (2011)

We use a single ion as an movable electric field sensor with accuracies on the order of a few V/m. For this, we compensate undesired static electric fields in a planar RF trap and characterize the static fields over an extended region along the trap axis. We observe a strong buildup of stray charges around the loading region on the trap resulting in an electric field of up to 1.3 kV/m at the ion position. We also find that the profile of the stray field remains constant over a time span of a few months.

Fabrication of a segmented micro Penning trap and numerical investigations of versatile ion positioning protocols

Date: 
2011-06-28
Author(s): 

M. Hellwig, A. Bautista-Salvador, K. Singer, G. Werth, F. Schmidt-Kaler

Reference: 

New Journal of Physics 12, 065019 (2010)
doi:10.1088/1367-2630/12/6/065019

We describe a versatile planar Penning trap structure, which allows one to dynamically modify the trapping configuration almost arbitrarily. The trap consists of 37 hexagonal electrodes, each with a circumcircle diameter of 300 μm, fabricated in a gold-on-sapphire lithographic technique. Every hexagon can be addressed individually, thus shaping the electric potential. The fabrication of such a device with clean room methods is demonstrated.

Fabrication of a segmented micro Penning trap and numerical investigations of versatile ion positioning protocols

Date: 
2010-06-28
Reference: 

M. Hellwig, A. Bautista-Salvador, K. Singer, G. Werth, F. Schmidt-Kaler
New Journal of Physics 12 065019 (2010)

We describe a versatile planar Penning trap structure, which allows to dynamically modify the trapping configuration almost arbitrarily. The trap consists of 37 hexagonal electrodes, each of 300 mikron diameter, fabricated in a gold-on-sapphire lithographic technique. Every hexagon can be addressed individually, thus shaping the electric potential. The fabrication of such a device with clean room methods is demonstrated.

Trapped electron coupled to superconducting devices

Date: 
2010-09-17
Author(s): 

P. Bushev, D. Bothner, J. Nagel. M. Kemmelr, K.B. Konovalenko, A. Loerincz, K. Ilin, M. Siegel, D. Koelle, R. Kleiner, F. Schmidt-Kaler

Reference: 

Eur. Phys. J. D 63, 9-16 (2011)

We propose to couple a trapped single electron to superconducting structures located at a variable distance from the electron. The electron is captured in a cryogenic Penning trap using electric fields and a static magnetic field in the Tesla range. Measurements on the electron will allow investigating the properties of the superconductor such as vortex structure, damping and decoherence.

Fast and robust quantum computation with ionic Wigner crystals

Date: 
2011-04-15
Author(s): 

J. D. Baltrusch, A. Negretti, J. M. Taylor, T. Calarco

Reference: 

Phys. Rev. A 83, 042319 (2011).

We present a detailed analysis of the modulated-carrier quantum phase gate implemented with Wigner crystals of ions confined in Penning traps. We elaborate on a recent scheme, proposed by two of the authors, to engineer two-body interactions between ions in such crystals. We analyze for the first time the situation in which the cyclotron (w_c) and the crystal rotation (w_r) frequencies do not fulfill the condition w_c=2w_r.

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